PART |
Description |
Maker |
PS21963-ST |
600V/10A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion.
|
Mitsubishi Electric Semiconductor
|
Q67040-S4521 IGW60T120 |
IGBTs & DuoPacks - 60A 1200V TO247 IGBT Low Loss IGBT in Trench and Fieldstop technology 在戴低损失和场终止IGBT技
|
INFINEON[Infineon Technologies AG]
|
PQ7DV10_01 PQ7DV10 PQ7DV1001 |
Variable Output,(1.5 to 7V)10A Output Low Power-loss Voltage Regulator
|
SHARP[Sharp Electrionic Components]
|
6MBP10VAA120-50 |
IGBT MODULE (V series) 1200V / 10A / IPM
|
Fuji Electric
|
PS21963-4S PS21963-4S09 |
Dual-In-Line Package Intelligent Power Module 600V/10A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion.
|
Mitsubishi Electric Semiconductor
|
AS2811 |
10A Low Dropout Voltage Regulator Fast Response, Adjustable & Fixed(10A,低压差稳压器(快速响应,可调和固定输出))
|
Sipex Corporation
|
APT1201R4BLL APT1201R4SLL |
POWER MOS 7 1200V 9A 1.400 Ohm Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|
HGT1S5N120BNDS HGT1S5N120BNDS9A |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 10A I(C) | TO-263AB 21A, 1200V, NPT Series N-Channel IGBTswith Anti-Parallel Hyperfast Diodes
|
Fairchild Semiconductor
|
IGB15N60T |
Low Loss IGBT in Trench and Fieldstop technology 在戴低损失和场终止IGBT技 1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
|
INFINEON[Infineon Technologies AG]
|
VF8146 |
LOW-COST SIX-CHANNEL 4TH-ORDER STANDARD-DEFINITION VIDEO FILTERS
|
UNISONIC TECHNOLOGIES
|
VF8146L-P14-T VF8146G-P14-T VF8146L-P14-R VF8146G- |
LOW-COST SIX-CHANNEL 4TH-ORDER STANDARD DEFINITION VIDEO FILTERS
|
Unisonic Technologies
|